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TSB772S

LowVce(sat)PNPTransistor

Features ●LowVCE(SAT)-0.25@IC/IB=2A/200mA(Typ.) ●ComplementarypartwithTSD882S Structure ●EpitaxialPlanarType ●PNPSiliconTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSB772S

LowVcesatPNPTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSB772SCT

LowVce(sat)PNPTransistor

Features ●LowVCE(SAT)-0.25@IC/IB=2A/200mA(Typ.) ●ComplementarypartwithTSD882S Structure ●EpitaxialPlanarType ●PNPSiliconTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSB772SCY

LowVce(sat)PNPTransistor

Features ●LowVCE(SAT)-0.25@IC/IB=2A/200mA(Typ.) ●ComplementarypartwithTSD882S Structure ●EpitaxialPlanarType ●PNPSiliconTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSD772CK

LowVcesatPNPTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSD772SCT

LowVcesatPNPTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSD772SCY

LowVcesatPNPTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSOP772

IRReceiverModulesforRemoteControlSystems

VishayVishay Siliconix

威世科技威世科技半导体

TSOP772

IRReceiverModulesforRemoteControlSystems

VishayVishay Siliconix

威世科技威世科技半导体

TSOP772

IRReceiverModulesforRemoteControlSystems

DESCRIPTION ThisIRreceiverseriesisoptimizedforlongburstremote controlsystemsindifferentenvironments.Thecustomer canchosebetweendifferentICsettings(AGCvariants),to findtheoptimumsolutionforhisapplication.Thehigherthe AGC,thebetternoiseissuppressed,butthe

VishayVishay Siliconix

威世科技威世科技半导体

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