丝印：TSB181I；Package：SO8；Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

文件：9.7668 Mbytes 页数：36 Pages

STMICROELECTRONICS

意法半导体

Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

文件：9.7668 Mbytes 页数：36 Pages

STMICROELECTRONICS

意法半导体

Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

文件：9.7668 Mbytes 页数：36 Pages

STMICROELECTRONICS

意法半导体

Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

文件：9.7668 Mbytes 页数：36 Pages

STMICROELECTRONICS

意法半导体