High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION TSAL6400 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp =

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VishayVishay Siliconix

威世

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

DESCRIPTION TSHG6400 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 8

文件：104.45 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Intensity LED, Ø 5 mm Tinted Diffused Package

DESCRIPTION This LED contains the double heterojunction (DH) GaAlAs on GaAs technology. This deep red LED can be utilized over a wide range of drive current. It can be DC or pulse driven to achieve desired light output. The device is available in a tinted diffused 5 mm package with a wide r

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VishayVishay Siliconix

威世

VISHAY
DIP-2

VishayVishay Siliconix

威世

上传：深圳市神舟芯电子科技有限公司

TI/德州仪器
QFP100

TI/德州仪器

上传：深圳市汇莱威科技有限公司