High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs, MQW technology with high radiant power molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λp = 940 nm • High reliability • High rad

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VishayVishay Siliconix

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GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1) Package

Description The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 radiant power improvement. Features ●

文件：83.89 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

文件：106.82 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Infrared Emitting Diode

Description The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 radiant power improvement. Features ●

文件：119.4 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世