首页 >TSAL4400-MSZ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HighPowerInfraredEmittingDiode,940nm,GaAlAs,MQW DESCRIPTION TSAL4400isaninfrared,940nmemittingdiodeinGaAlAs, MQWtechnologywithhighradiantpowermoldedina blue-grayplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-1 •Dimensions(inmm):Ø3 •Peakwavelength:λp=940nm •Highreliability •Highrad | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs DESCRIPTION TheTSHA440.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES •Packagetype:leaded •Packageform:T-1 •Dimensions(inmm):Ø3 •Peakwavelength:p=875nm •Highreliability •Angleofhalfintens | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode Description TheTSHA44..seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout50radiantpowerimprovement. Features ● | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
GaAlAsInfraredEmittingDiodesinø3mm(T–1)Package Description TheTSHA44..seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout50radiantpowerimprovement. Features ● | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
GaAs/GaAlAsInfraredEmittingDiodeinSideviewPackage Description TSSP4400isahighintensityinfraredemittingdiodeinGaAlAsonGaAstechnology,moldedinaclear,blue–greytintedplasticpackagewithsphericalsideviewlens.Thedeviceisspectrallymatchedtosiliconphotodiodesandphototransistors. Features ●Highradiantpowerandhigh | Temic TEMIC Semiconductors | Temic | ||
GaAsInfraredEmittingDiodeinø3mm(T–1)Package DESCRIPTION TSUS4400isaninfrared,950nmemittingdiodeinGaAstechnologymoldedinabluetintedplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-1 •Dimensions(inmm):∅3 •Peakwavelength:λp=950nm •Highreliability •Angleofhalfintensity:ϕ=±18° •Low | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,950nm,GaAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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