Tele Communication surge absorber

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ETCList of Unclassifed Manufacturers

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5A SURFACE MOUNT GLASS PASSIVATED BRIDGE

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YFWDIODE

佑风微

Bipolar Transistors Silicon PNP Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) AEC-Q101 qualified (Note 1) (2) High DC current gain: hFE = 200 to 500 (IC = -0.3 A) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.2 V (max) (4) High-speed switching: tf = 90 ns (typ.)

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TOSHIBA

东芝

Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) AEC-Q101 qualified (Note 1) (2) High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) (3) Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) (4) High-speed switching: tf = 120 ns (typ.)

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TOSHIBA

东芝