首页 >TS8P08G>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-8A@TC=25℃ ·DrainSourceVoltage-VDSS=-80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERFIELDEFFECTTRANSISTOR PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs8AMPERES rDS(on)=0.4OHM80and100VOLTS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-8A@TC=25℃ ·DrainSourceVoltage-VDSS=-80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERFIELDEFFECTTRANSISTOR PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs8AMPERES rDS(on)=0.4OHM80and100VOLTS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
P-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
-8A,-80VAND-100V,0.400Ohm,P-CHANNELPOWERMOSFETS ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety | HARRIS Harris Corporation | HARRIS | ||
-8A,-80VAND-100V,0.400Ohm,P-CHANNELPOWERMOSFETS ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety | HARRIS Harris Corporation | HARRIS |
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