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IC62LV256L-15J

32Kx8LowPowerSRAMwith3.3V

DESCRIPTION TheICSIIC62LV256Lisaveryhigh-speed,lowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas15nsmaximum. FEATURES

ICSI

Integrated Circuit Solution Inc

IC62LV256L-15JI

32Kx8LowPowerSRAMwith3.3V

DESCRIPTION TheICSIIC62LV256Lisaveryhigh-speed,lowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas15nsmaximum. FEATURES

ICSI

Integrated Circuit Solution Inc

IC62LV256L-15T

32Kx8LowPowerSRAMwith3.3V

DESCRIPTION TheICSIIC62LV256Lisaveryhigh-speed,lowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas15nsmaximum. FEATURES

ICSI

Integrated Circuit Solution Inc

IC62LV256L-15TI

32Kx8LowPowerSRAMwith3.3V

DESCRIPTION TheICSIIC62LV256Lisaveryhigh-speed,lowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas15nsmaximum. FEATURES

ICSI

Integrated Circuit Solution Inc

IS62LV256L-15J

32Kx8LOWVOLTAGECMOSSTATICRAM

DESCRIPTION TheISSIIS62LV256Lisaveryhigh-speed,lowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas15nsmaximum. FEATURES

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS62LV256L-15JI

32Kx8LOWVOLTAGECMOSSTATICRAM

DESCRIPTION TheISSIIS62LV256Lisaveryhigh-speed,lowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas15nsmaximum. FEATURES

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS62LV256L-15T

32Kx8LOWVOLTAGECMOSSTATICRAM

DESCRIPTION TheISSIIS62LV256Lisaveryhigh-speed,lowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas15nsmaximum. FEATURES

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS62LV256L-15TI

32Kx8LOWVOLTAGECMOSSTATICRAM

DESCRIPTION TheISSIIS62LV256Lisaveryhigh-speed,lowpower,32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas15nsmaximum. FEATURES

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

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