General Purpose NPN Transistor

BVCEO = 40V Ic = 600mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA Features ◇ Driver stage of AF amplifier. ◇ General purpose switching application Structure ◇ Epitaxial planar type.

文件：44.03 Kbytes 页数：3 Pages

TSC

台湾半导体

General Purpose NPN Transistor

BVCEO = 40V Ic = 600mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA Features ◇ Driver stage of AF amplifier. ◇ General purpose switching application Structure ◇ Epitaxial planar type.

文件：44.03 Kbytes 页数：3 Pages

TSC

台湾半导体

General Purpose NPN Transistor

TSC

台湾半导体

NPN switching transistors

FEATURES 1. High current (max. 800 mA) 2. Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package.PNP complement: 2N2907A.

文件：53.43 Kbytes 页数：8 Pages

PHI

PHI

HIGH-SPEED SWITCHES

DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use

文件：71.73 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

文件：29.63 Kbytes 页数：1 Pages

SEMICOA