首页 >TS2411DICE>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GeneralPurposeNPNTransistor Features ●DriverStageofAFAmplifier ●GeneralPurposeSwitchingApplication Structure ●EpitaxialPlanarType ●ComplementarytoTSA1036CX | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
GeneralPurposeNPNTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
GeneralPurposeNPNTransistor Features ●DriverStageofAFAmplifier ●GeneralPurposeSwitchingApplication Structure ●EpitaxialPlanarType ●ComplementarytoTSA1036CX | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
GeneralPurposeNPNTransistor Features ●DriverStageofAFAmplifier ●GeneralPurposeSwitchingApplication Structure ●EpitaxialPlanarType ●ComplementarytoTSA1036CX | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
GeneralPurposeNPNTransistor Features ●DriverStageofAFAmplifier ●GeneralPurposeSwitchingApplication Structure ●EpitaxialPlanarType ●ComplementarytoTSA1036CX | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
GeneralPurposeNPNTransistor Features ●DriverStageofAFAmplifier ●GeneralPurposeSwitchingApplication Structure ●EpitaxialPlanarType ●ComplementarytoTSA1036CX | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
GeneralPurposeNPNTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
GeneralPurposeDualNPNTransistor BVCEO=40V Ic=600mA VCE(SAT),=0.2V(typ.)@Ic/Ib=500mA/50mA Features ◇TwoTSC2411chipsinaSTO-363package ◇Transistorelementsareindependent,eliminatinginterference ◇Optimalforlowvoltageoperation Structure ◇Epitaxialplanartype. ◇Mounting | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
TimeDelayRelays/Dedicated-Interval Description TheTSD2Seriesisdesignedformoredemandingcommercial andindustrialapplicationswheresmallsizeandaccurate performancearerequired.Thefactorycalibrationforfixedtime delaysiswithin1ofthetargettimedelay.Therepeataccuracy, understableconditions,is0.1of | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
UltraSmallμClamp®1-Line,24VESDProtection Description μClamp®TVSdiodesaredesignedtoprotectsensitive electronicsfromdamageorlatch-upduetoESD.It featureslargecross-sectionalareajunctionsfor conductinghightransientcurrents.Thisdeviceoffers desirablecharacteristicsforboardlevelprotection includingfastres | SEMTECHSemtech Corporation 升特 | SEMTECH |
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