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汉博

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HANBO

汉博

Bipolar Transistors Silicon PNP Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ.) (IC = -1.2 A)

文件：289.92 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Transistors Silicon NPN Triple-Diffused Type

Features (1) High speed switching : tf = 0.15 µs (typ.) (IC = 0.5 A) (2) High collector breakdown voltage: VCES = 800 V , VCEO = 375 V Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters

文件：190.31 Kbytes 页数：6 Pages

TOSHIBA

东芝

Transit, InOutdoor, BO, OS2, 12f, Subunit 2.0mm, AIA, Dbl Jkt - LSZH,OFCR-ST1

Product Description Transit Grade, Indoor/Outdoor, Breakout, OS2, 12 Fibers, Subunits 2.0mm 900um, Aluminum Interlock Armor, Double Jacket - LSZH, OFCR-ST1

文件：162.61 Kbytes 页数：2 Pages

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