3254

Heyco®OriginalSeries-35LiquidTightCordgrips

3254

CustomerSpecification

3254

CustomerSpecification

Construction 1)Component11X1HOOKUP a)Conductor16(7/24)AWGTinnedCopper0.060 b)Insulation0.010Wall,Nom.PVC,SemiRigid0.080+/-0.002 (1)Print ALPHAWIREE163869-*RUAWMSTYLE106180C300V VW-116AWG---LLXXXXCSAAWMIA/B80C300VOLTS FT1CEROHS {0}*=Factory

AN3254

SPIprotocolfortheSTPMC1meteringdevice

AOH3254

150VN-ChannelMOSFET

BK3254

BluetoothMultimediaSoC

1.1.Features Operationvoltagefrom2.8Vto5.2V Bluetooth4.1+EDRcompliant -90dBmsensitivityfor1Mbpsmodeand5dBmtransmitpower -107dBmsensitivityFMreceiver 1-wireor4-wiresSD-cardinterface USB2.0hostanddevice Integrated90dBSNRADCandstereoDAC

CEA3254

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,5.7A,RDS(ON)=24mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package.

CED3254

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,26A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=39mW@VGS=4.5V. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.

CEM3254

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,7.8A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CEM3254

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,7.8A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.