首页 >TRM012>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
100mALowProfileChipSchottkyRectifier | TAITRON TAITRON Components Incorporated | TAITRON | ||
100mALowProfileChipSchottkyRectifier | TAITRON TAITRON Components Incorporated | TAITRON | ||
100mALowProfileChipSchottkyRectifier | TAITRON TAITRON Components Incorporated | TAITRON | ||
BipolarTransistorsSiliconPNPEpitaxialType Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=100to200(VCE=-2V,IC=-0.4A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.22V(max)(IC=-1.2A,IB=-0.12A) (3)High-speedswitching:tf=35ns(typ.)(IC=-1.2A) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarTransistorsSiliconNPNTriple-DiffusedType Features (1)Highspeedswitching:tf=0.15µs(typ.)(IC=0.5A) (2)Highcollectorbreakdownvoltage:VCES=800V,VCEO=375V Applications •High-SpeedHigh-VoltageSwitching •SwitchingVoltageRegulators •High-SpeedDC-DCConverters | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Transit,InOutdoor,BO,OS2,12f,Subunit2.0mm,AIA,DblJkt-LSZH,OFCR-ST1 ProductDescription TransitGrade,Indoor/Outdoor,Breakout,OS2,12Fibers,Subunits2.0mm900um,AluminumInterlockArmor,DoubleJacket-LSZH,OFCR-ST1 | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
Transit,InOutdoor,BO,OS2,12f,Subunit2.0mm,AIA,DblJkt-LSZH,OFCR-ST1 ProductDescription TransitGrade,Indoor/Outdoor,Breakout,OS2,12Fibers,Subunits2.0mm900um,AluminumInterlockArmor,DoubleJacket-LSZH,OFCR-ST1 | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
Transit,InOutdoor,BO,OS2,12f,Subunit2.0mm,SglJkt-LSZH,OFNR-ST1 ProductDescription TransitGrade,Indoor/Outdoor,Breakout,OS2,12Fibers,Subunits2.0mm900um,SingleJacket-LSZH,OFNR-ST1 | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
Transit,InOutdoor,BO,OS2,12f,Subunit2.0mm,SglJkt-LSZH,OFNR-ST1 ProductDescription TransitGrade,Indoor/Outdoor,Breakout,OS2,12Fibers,Subunits2.0mm900um,SingleJacket-LSZH,OFNR-ST1 | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASITVU012isacommonemitterRFbipolartransistorcapableofproviding12W,peak,Class-A,RFpoweroutputover470-860MHz.Itutilizesinputimpedancematchingtoprovidebroadbandperformance. FEATURES: •470-860MHzoperation •InputMatchingNetwork •Commonemitter | ASI Advanced Semiconductor | ASI |
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