序号 |
型号 |
极限工作电压 |
最大电流允许值 |
最大耗散功率 |
放大倍数 |
最大工作频率 |
制作材料 |
1 | 2SB635
| 32V | 0.15A | 0.15W | | <1MHZ或未知 | Ge-PNP |
2 | 2SB636
| 32V | 0.15A | 0.15W | | <1MHZ或未知 | Ge-PNP |
3 | 2SB637(K)
| 50V | 0.1A | 0.3W | | 200MHZ | Si-PNP |
4 | 2SB638(H)
| 100V | 10A | 80W | β>1000 | <1MHZ或未知 | Si-P+Darl+Di |
5 | 2SB639(H)
| 100V | 10A | 100W | β>1000 | <1MHZ或未知 | Si-P+Darl+Di |
6 | 2SB64
| 100V | 6A | 25W | | <1MHZ或未知 | Ge-PNP |
7 | 2SB640
| 25V | 0.3A | 0.15W | | <1MHZ或未知 | Ge-PNP |
8 | 2SB641
| 30V | 0.1A | 0.4W | | 80MHZ | Si-PNP |
9 | 2SB642
| 60V | 0.1A | 0.4W | | 80MHZ | Si-PNP |
10 | 2SB643
| 30V | 0.5A | 0.6W | | 200MHZ | Si-PNP |
11 | 2SB644
| 60V | 0.5A | 0.6W | | 200MHZ | Si-PNP |
12 | 2SB645
| 200V | 15A | 150W | | 12MHZ | Si-PNP |
13 | 2SB646(A)
| 120V | 0.05A | 0.9W | | 140MHZ | Si-PNP |
14 | 2SB647(A)
| 120V | 1A | 0.9W | | 140MHZ | Si-PNP |
15 | 2SB648(A)
| 180V | 0.05A | | | 140MHZ | Si-PNP |
16 | 2SB649(A)
| 180V | 1.5A | | | 140MHZ | Si-PNP |
17 | 2SB65
| 30V | 0.1A | 0.15W | | <1MHZ或未知 | Ge-PNP |
18 | 2SB650(H)
| 100V | 15A | 100W | β>1000 | <1MHZ或未知 | Si-P+Darl+Di |
19 | 2SB653(A)
| 120V | 7A | 60W | | 20MHZ | Si-PNP |
20 | 2SB654(A)
| 120V | 7A | 80W | | 20MHZ | Si-PNP |
21 | 2SB655(A)
| 160V | 12A | 100W | | 20MHZ | Si-PNP |
22 | 2SB656(A)
| 160V | 12A | 125W | | 20MHZ | Si-PNP |
23 | 2SB66(H)
| 30V | 0.07A | 0.15W | | <1MHZ或未知 | Ge-PNP |
24 | 2SB668
| 60V | 3A | 25W | β>1000 | <1MHZ或未知 | Si-P+Darl |
25 | 2SB668A
| 80V | 3A | 25W | β>1000 | <1MHZ或未知 | Si-P+Darl |
26 | 2SB669
| 70V | 4A | 40W | β>1000 | <1MHZ或未知 | Si-P+Darl |
27 | 2SB669(A)
| 90V | 4A | 40W | β>1000 | <1MHZ或未知 | Si-P+Darl |
28 | 2SB67(H)
| 30V | 0.15A | 0.35W | | <1MHZ或未知 | Ge-PNP |
29 | 2SB670
| 90V | 5A | 60W | β>1000 | <1MHZ或未知 | Si-P+Darl |
30 | 2SB670(A)
| 110V | 5A | 60W | β>1000 | <1MHZ或未知 | Si-P+Darl |