序号 | 型号 | 极限工作电压 | 最大电流允许值 | 最大耗散功率 | 放大倍数 | 最大工作频率 | 制作材料 |
---|---|---|---|---|---|---|---|
1 | 2SB1107 | 120V | 10A | 40W | β=5000 | <1MHZ或未知 | Si-P+Darl+Di |
2 | 2SB1108 | 120V | 8A | 50W | β>1000 | 30MHZ | Si-P+Darl |
3 | 2SB1109 | 160V | 0.1A | 140MHZ | Si-PNP | ||
4 | 2SB111 | 25V | 0.05A | 0.1W | β>30 | <1MHZ或未知 | Ge-PNP |
5 | 2SB1110 | 200V | 0.1A | 140MHZ | Si-PNP | ||
6 | 2SB1111 | 60V | 2A | 10W | β>2000 | <1MHZ或未知 | Si-P+Darl+Di |
7 | 2SB1112 | 120V | 6A | 40W | β=5000 | <1MHZ或未知 | Si-P+Darl+Di |
8 | 2SB1113 | 120V | 8A | 40W | β=5000 | <1MHZ或未知 | Si-P+Darl+Di |
9 | 2SB1114 | 20V | 2A | 180MHZ | Si-PNP | ||
10 | 2SB1115 | 60V | 1A | >80MHZ | Si-PNP | ||
11 | 2SB1115A | 80V | 1A | >80MHZ | Si-PNP | ||
12 | 2SB1116 | 60V | 1A | 0.75W | 120MHZ | Si-PNP | |
13 | 2SB1116A | 80V | 1A | 0.75W | 120MHZ | Si-PNP | |
14 | 2SB1117 | 30V | 3A | 1W | 280MHZ | Si-PNP | |
15 | 2SB1118 | 20V | 0.7A | 250MHZ | Si-PNP | ||
16 | 2SB1119 | 25V | 1A | 180MHZ | Si-PNP | ||
17 | 2SB112 | 25V | 0.05A | 0.1W | β>43 | <1MHZ或未知 | Ge-PNP |
18 | 2SB1120 | 20V | 2.5A | 250MHZ | Si-PNP | ||
19 | 2SB1121 | 30V | 2A | 150MHZ | Si-PNP | ||
20 | 2SB1122 | 60V | 1A | 150MHZ | Si-PNP | ||
21 | 2SB1123 | 60V | 2A | 150MHZ | Si-PNP | ||
22 | 2SB1124 | 60V | 3A | 150MHZ | Si-PNP | ||
23 | 2SB1125 | 80V | 0.7A | β>5000 | 170MHZ | Si-P+Darl | |
24 | 2SB1126 | 80V | 1.5A | β>4000 | 120MHZ | Si-P+Darl | |
25 | 2SB1127 | 25V | 5A | 10W | 320MHZ | Si-PNP | |
26 | 2SB1128 | 50V | 2A | 10W | β=5000 | <1MHZ或未知 | Si-P+Darl+Di |
27 | 2SB1129 | 80V | 1.5A | 1W | β=10000 | <1MHZ或未知 | Si-P+Darl |
28 | 2SB113 | 25V | 0.05A | 0.1W | β>61 | <1MHZ或未知 | Ge-PNP |
29 | 2SB1130(M) | 120V | 1.5A | 1W | 50MHZ | Si-PNP | |
30 | 2SB1130A(M) | 160V | 1.5A | 1W | 50MHZ | Si-PNP |