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TRAL02中文资料Chip Thin-Film RF Inductors (TRAL)数据手册DIRECT规格书

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厂商型号

TRAL02

功能描述

Chip Thin-Film RF Inductors (TRAL)

制造商

DIRECT Directed Energy, Inc.

中文名称

德利特

数据手册

下载地址下载地址二

更新时间

2025-10-3 17:23:00

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TRAL02规格书详情

描述 Description

Token (TRAL) chip inductors provide reliable protection against challenging EMI problems in high frequency filtering applications. This miniature wirewound inductor features alow seated height that stands only 0.23mm above the circuit board. It protects sensitive electronic circuitry and ensures high performance operation in a wide range of compact devices that are shrinking ever smaller in physical size.

Token (TRAL) series uses a thin-film technology for high reliability and precision tolerances to 1% or ±0.1nH. The (TRAL) thin-film inductor series is available in 0603, 0402, and 0201 sizes, in inductance values from 0.1 to 100nH, in tolerancesdown to 0.1nH or 1%, and with SRF (self-resonant frequency) tightly controlled.

The technology characteristics make it ideal for the latest cellphone and PDA applications in addition to wireless network and Bluetooth enabled devices.

Application of specific designs also available including different inductance values and Q specifications adjusted to frequency requirements. Customed designs and tighter tolerances are available on request. Thin Film Inductor is mounted in a surfacemount package which assures mechanical stability, excellent lead coplanarity, and suitable for automatic pick and place equipment.

The (TRAL) series is lead-free and RoHS compliant. Detailed specifications, both mechanical and electrical, contact Token sales representative for more information.

Download Complete Specification Thin-Film RF Chip Inductors (TRAL) PDF.

应用 Application

• Communication Appliances, Cellular Telephone, Pagers and GPS Products.
• Wireless LAN, Bluetooth Module, VCO,TCXO Circuit and RF Transceiver Module.

技术参数

  • 制造商编号

    :TRAL02

  • 生产厂家

    :DIRECT

  • Tolerance(% or nH)

    :60 ± 1.0

  • Q(min)

    :13.5 ± 0.7

  • DCR(Ω)(max)

    :9.5 ± 1.0

  • IDC(mA)(max)

    :11.5 ± 1.0

  • SRF(GHz)(min)

    :10

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