首页 >TR2106STR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RECTIFIERDIODE FEATURES ■DoubleSideCooling ■HighSurgeCapability APPLICATIONS ■Rectification ■FreewheelDiode ■DCMotorControl ■PowerSupplies ■Welding ■BatteryChargers | TRSYS Transys Electronics | TRSYS | ||
TW2106/TW2108EmbeddedPrecisionGPSL1Antenna | TALLYSMAN Tallysman Wireless Inc. | TALLYSMAN | ||
ATTENUATORANDPOWERPINDIODES2??30MHz | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PINDIODE DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
ProductChangeNotification | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
ProductChangeNotification | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
L-BANDPADRIVERAMPLIFIER DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
GaAsINTEGRATEDCIRCUITS FEATURES •Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz •Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) •Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm • | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@ | CEL California Eastern Labs | CEL | ||
L-BANDPADRIVERAMPLIFIER DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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