首页 >TQS5202-EVAL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
0.1??6GHzTransferSwitch | TriQuint TriQuint Semiconductor | TriQuint | ||
InfraredEmittingDiode,875nm,GaAlAs DESCRIPTION TheTSHA520.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Leadswithstand-off •Peakwavelength:λp=875nm •Highreliabilit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
GaAlAsInfraredEmittingDiodesinø5mm(T–13/4)Package Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,950nm,GaAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,950nm,GaAs DESCRIPTION TSUS5200isaninfrared,950nmemittingdiodeinGaAstechnologymoldedinablue-graytintedplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Leadswithstand-off •Peakwavelength:λp=950nm •Highreliability •Angleofha | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,950nm,GaAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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