DC - 4 GHz, 5 Watt GaN Power Transistor

Qorvo's TQP0102 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor.\nThe TQP0102 can be used in a Doherty architecture for the final stage of a base station power amplifier for small cell, microcell and active antenna system • Frequency: DC to 4 GHz\n• Output Power (P3dB): 37 dBm\n• Linear Gain: > 19 dB\n• Operating Voltage: 32 V\n• Drain Efficiency: 68% at P3dB\n• Package Dimensions: 3 x 3 mm QFN;

Qorvo

威讯联合

5 W, DC to 4 GHz, GaN Power Transistor

文件：374.99 Kbytes 页数：10 Pages

TriQuint

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SUNTAN

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2-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO DIRECTION SENSING AND 짹15-kV ESD PROTECTION

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TI

德州仪器