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TVA1303

AluminumCapacitors85C,Miniature,AxialLead

FEATURES •Lowleakagecurrent •Longshelflife •IdealforapplicationinTVsets,autoradios,radio-phonecombinations,electronictestingequipment •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半导体

TZ1303A

HC49SMD6MHzCrystalUnit

Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49SMDcrystalunitforuseinwirelesstelecommunicationsdevices

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

UES1303

HIGHEFFICIENCYRECTIFIERS3.5AMP

DIGITRON

Digitron Semiconductors

UES1303

RECTIFIERS

DESCRIPTION TheUES1104seriesisspecificallydesignedforoperationinpowerswitchingcircuitsoperatingatfrequenciesofatleast20KHz. FEATURES ●VeryLowForwardVoltage(1.15V) ●VeryFastRecoveryTimes(50nSec) ●SmallSize ●ConvenientPackage

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UES1303

HighEfficiency,3.5A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

VBA1303

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBA1303

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBA1303C

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBE1303

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBE1303

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

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