MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 16 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5

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TOSHIBA

东芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 150 A \nPower Dissipation PD 142 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Series 2400 SourceMeter SMU Instruments

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TEKTRONIX

泰克

Sub-femtoamp Remote SourceMeter짰 SMU Instrument

Sub-femtoamp Remote SourceMeter® SMU Instrument The Model 6430 Sub-Femtoamp Remote SourceMeter SMU Instrument combines the voltage and current sourcing and measurement functions of Keithley’s popular SourceMeter SMU instruments with sensitivity, noise, and input resistance specifications superior

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TEKTRONIX

泰克

Heyco-Flex™ Quick Twist Conduit Fittings

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HEYCO