MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 28 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 2.0 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) (5)

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TOSHIBA

东芝

Power MOSFET (N-ch single 60V VDSS 150V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 170 A \nPower Dissipation PD 142 W \nDrain-Source voltage VDSS 75 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

TSSOP16

3PEAK/思瑞浦

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MSOP-10

思瑞浦

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SMD

TDK

东电化

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