MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 150 V) (5

文件：379.33 Kbytes 页数：10 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single 60V VDSS 150V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 50 A \nPower Dissipation PD 142 W \nDrain-Source voltage VDSS 150 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

DUAL-BAND/DUAL-MODE PCS RECEIVER

文件：233.52 Kbytes 页数：17 Pages

TI

德州仪器

DUAL-BAND/DUAL-MODE PCS RECEIVER

文件：233.52 Kbytes 页数：17 Pages

TI

德州仪器

Electrically insulating PVC heat shrinkable tubing

文件：46.22 Kbytes 页数：2 Pages

MACOM