RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matchin

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Motorola

摩托罗拉

RF POWER TRANSISTOR NPN SILICON

恩XP

High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero

DESCRIPTION TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅5 • Peak wavelength: λp = 830 nm

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VishayVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

文件：101.18 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

文件：113.53 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司