丝印：50R250C；Package：TO-251；500V Super-Junction Power MOSFET

文件：1.28873 Mbytes 页数：12 Pages

WUMC

紫光国微

丝印：50R250C；Package：TO-251；500V Super-Junction Power MOSFET

文件：1.69371 Mbytes 页数：12 Pages

WUMC

紫光国微

超结功率 MOSFET

紫光国微

N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.25Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.46 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High Peak Current Capability • FEATURES • Static drain-source on-resistance: RDS(on)≤250mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.66 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMos Power Transistor

Features • Lowest figure of merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free for mold compound • Qualified for industrial grade applications according to JEDEC1) CoolMOS CP is designed for: • Ha

文件：557.04 Kbytes 页数：10 Pages

Infineon

英飞凌