High Power Density Surface Mount PAR® Transient Voltage Suppressors

FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Unidirection only • Excellent clamp

文件：97.64 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Power Density Surface Mount Automotive Transient Voltage Suppressors

文件：103.4 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Power Density Surface Mount PAR Transient Voltage Suppressors

文件：89.91 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Power Density Surface Mount PAR Transient Voltage Suppressors

文件：88.15 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Power Density Surface Mount PAR Transient Voltage Suppressors

文件：88.15 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Power Density Surface-Mount PAR® Transient Voltage Suppressors

分立 Junction passivation optimized design passivated anisotropic rectifier technology\nTJ = 185 °C capability suitable for high reliability and automotive requirement\nVery low profile - typical height of 1.0 mm;

Vishay

威世科技

Package：DO-220AA；包装：卷带（TR） 类别：电路保护 TVS - 二极管 描述：TVS DIODE 30.8VWM 49.9VC DO220AA

Vishay General Semiconductor - Diodes Division

Package：DO-220AA；包装：卷带（TR） 类别：电路保护 TVS - 二极管 描述：TVS DIODE 30.8VWM 49.9VC DO220AA

Vishay General Semiconductor - Diodes Division

Package：DO-220AA；包装：卷带（TR） 类别：电路保护 TVS - 二极管 描述：TVS DIODE 30.8VWM 49.9VC DO220AA

Vishay General Semiconductor - Diodes Division