TPSI2140-Q1中文资料德州仪器数据手册PDF规格书

1 Features

• Qualified for automotive applications

– AEC-Q100 grade 1: –40 to 125°C ambient

operating temperature

• Integrated MOSFETs with 2-mA avalanche rating,

up to 5 mA with TPSI2140T-Q1 version

– 1400-V standoff voltage

– RON = 130 Ω (TJ = 25°C)

– TON, TOFF < 350 μs

• Low primary side supply current

– 7.5-mA ON state current

– 6-μA OFF state current

• Robust isolation barrier:

– > 26 year projected lifetime at 1000-VRMS /

1414-VDC working voltage

– Isolation rating, VISO, up to 3750 VRMS / 5300

VDC

– Peak surge, VIOSM, up to 6000 V

– ± 100-V/ns typical CMTI

• SOIC (DWQ-11) package with wide pins for

improved thermal capability

– Creepage and clearance ≥ 8 mm (primarysecondary)

– Creepage and clearance ≥ 6 mm (across switch

terminals)

• Safety-related certifications

– (Planned) DIN VDE V 0884-11:2017-01

– (Planned) UL 1577 component recognition

program