TPS7H2221-SEP Radiation Tolerant 5.5-V, 1.25-A, 115-mΩ Load Switch

1 Features • Vendor item drawing available, VID V62/22609 • Total ionizing dose (TID) characterized to 30 krad(Si) – TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si) • Single-event effects (SEE) characterized – Single-event latch-up (SEL), single-event burnout

文件：1.25762 Mbytes 页数：29 Pages

TI

德州仪器

TPS7H2221-SEP Radiation Tolerant 5.5-V, 1.25-A, 115-mΩ Load Switch

1 Features • Total ionizing dose (TID) characterized to 30 krad(Si) – TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si) • Single-event effects (SEE) characterized – Single-event latch-up (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) imm

文件：1.27896 Mbytes 页数：26 Pages

TI

德州仪器

TPS7H2221-SEP Radiation Tolerant 5.5-V, 1.25-A, 115-mΩ Load Switch

1 Features • Vendor item drawing available, VID V62/22609 • Total ionizing dose (TID) characterized to 30 krad(Si) – TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si) • Single-event effects (SEE) characterized – Single-event latch-up (SEL), single-event burnout

文件：1.25762 Mbytes 页数：29 Pages

TI

德州仪器

TPS7H2221-SEP Radiation Tolerant 5.5-V, 1.25-A, 115-mΩ Load Switch

1 Features • Total ionizing dose (TID) characterized to 30 krad(Si) – TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si) • Single-event effects (SEE) characterized – Single-event latch-up (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) imm

文件：1.27896 Mbytes 页数：26 Pages

TI

德州仪器

TPS7H2221-SEP Radiation Tolerant 5.5-V, 1.25-A, 115-mΩ Load Switch

1 Features • Total ionizing dose (TID) characterized to 30 krad(Si) – TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si) • Single-event effects (SEE) characterized – Single-event latch-up (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) imm

文件：1.27896 Mbytes 页数：26 Pages

TI

德州仪器