TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1 Features • Total ionizing dose (TID) characterized – Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear

文件：2.64628 Mbytes 页数：59 Pages

TI

德州仪器

TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1 Features • Total ionizing dose (TID) characterized – Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si) • Single-Event Effects (SEE) Characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear

文件：3.13998 Mbytes 页数：60 Pages

TI

德州仪器

TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1 Features • Total ionizing dose (TID) characterized – Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si) • Single-Event Effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear

文件：3.85939 Mbytes 页数：68 Pages

TI

德州仪器

TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1 Features • Total ionizing dose (TID) characterized – Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si) • Single-Event Effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear

文件：3.75129 Mbytes 页数：66 Pages

TI

德州仪器

TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1 Features • Total ionizing dose (TID) characterized – Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si) • Single-Event Effects (SEE) Characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear

文件：3.13998 Mbytes 页数：60 Pages

TI

德州仪器

TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1 Features • Total ionizing dose (TID) characterized – Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si) • Single-Event Effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear

文件：3.85939 Mbytes 页数：68 Pages

TI

德州仪器

TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1 Features • Total ionizing dose (TID) characterized – Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si) • Single-Event Effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear

文件：3.75129 Mbytes 页数：66 Pages

TI

德州仪器

耐辐射、QMLV 和 QMLP、1.5A、超低噪声、高 PSRR、低压降 (LDO) 稳压器

TPS7H1111 是一款超低噪声、高 PSRR、低压降线性稳压器 (LDO)，针对为航天环境中的射频 (RF) 器件供电进行了优化。它能够在 0.85V 至 7V 输入范围内提供高达 1.5A 的电流，并由 2.2V 至 14V 的辅助电源供电。\n\n该器件具有高性能，可抑制电源产生的相位噪声和时钟抖动，因此它非常适合为高性能 ADC、DAC、VCO、PLL、串行器/解串器和卫星中的其他射频元件供电。对于需要低电压运行的数字负载（如 FPGA 和 DSP），超高的精度和出色的瞬态性能可确保实现出色的系统性能。\n\nQML 型号 5962R21203 提供了标准微电路图 (SMD)。-SE • 电离辐射总剂量 (TID) 特征值 \n• 确定了单粒子效应 (SEE) \n• 单粒子功能中断 (SEFI) 和单粒子瞬变 (SET) 对于 LET 的额定值高达 75MeV-cm2/mg\n• 超低噪声 (10Hz – 100kHz)： \n• 高电源抑制比，PSRR（典型值）： \n• 100 kHz 时为 71dB\n• 输入电压范围：0.85 V 至 7 V\n• 输出电压低至 0.4 V\n• 在线路和负载范围内出色的输出精度： \n• 25°C 时为 +0.9%/-0.7%\n• 低压降：1.5A 时为 215mV（典型值）\n• 开漏电源正常状态 (PG;

TI

德州仪器