TPS73718DRBRM3中文资料德州仪器数据手册PDF规格书

1 Features

• Stable with 1-μF or larger ceramic output capacitor

• Input voltage range: 2.2 V to 5.5 V

• Ultra-low dropout voltage

– Legacy silicon: 130 mV typical at 1 A

– New silicon, M3 suffix: 122 mV typical at 1 A

• Excellent load transient response—even with only

1-μF output capacitor

• NMOS topology delivers low reverse leakage

current

• Initial accuracy: 1%

• Overall accuracy over line, load, and temperature

– Legacy silicon: 3%

– New silicon, M3 suffix: 1.5%

• Less than 20 nA typical IQ in shutdown mode

• Thermal shutdown and current limit for fault

protection

• Available in multiple output voltage versions:

– Adjustable output: 1.20 V to 5.5 V

– Custom outputs available using factory

package-level programming

2 Applications

• Point-of-load regulation for DSPs, FPGAs, ASICs,

and microprocessors

• Post-regulation for switching supplies

• Portable and battery-powered equipment

3 Description

The TPS737 linear low-dropout (LDO) voltage

regulator uses an NMOS pass transistor in a voltagefollower

configuration. This topology is relatively

insensitive to the output capacitor value and ESR,

allowing for a wide variety of load configurations. Load

transient response is excellent, even with a small 1-μF

ceramic output capacitor. The NMOS topology also

allows for very low dropout.

The TPS737 uses an advanced BiCMOS process to

yield high precision while delivering very low dropout

voltages and low ground pin current. Part numbers

with the M3 suffix use an updated design on the

latest TI process technology. Current consumption,

when not enabled, is less than 20 nA and is designed

for portable applications. This device is protected by

thermal shutdown and foldback current limit.

For applications that require higher output voltage

accuracy, consider TI's TPS7A37 1% overall

accuracy, 1-A low-dropout voltage regulator.