TPS73718DRBRM3中文资料德州仪器数据手册PDF规格书

1 Features

• Stable with 1μF or larger ceramic output capacitor

• Input voltage range: 2.2V to 5.5V

• Ultra-low dropout voltage

– Legacy silicon: 130mV typical at 1A

– New silicon: 122mV typical at 1A

• Excellent load transient response—even with only

1μF output capacitor

• NMOS topology delivers low reverse leakage

current

• Initial accuracy: 1%

• Overall accuracy over line, load, and temperature

– Legacy silicon: 3%

– New silicon: 1.5%

• Less than 20nA typical IQ in shutdown mode

• Thermal shutdown and current limit for fault

protection

• Available in multiple output voltage versions:

– Adjustable output: 1.20V to 5.5V

– Custom outputs available using factory

package-level programming

2 Applications

• Point-of-load regulation for DSPs, FPGAs, ASICs,

and microprocessors

• Post-regulation for switching supplies

• Portable and battery-powered equipment

3 Description

The TPS737 linear low-dropout (LDO) voltage

regulator uses an NMOS pass transistor in a voltagefollower

configuration. This topology is relatively

insensitive to the output capacitor value and ESR,

allowing for a wide variety of load configurations. Load

transient response is excellent, even with a small 1μF

ceramic output capacitor. The NMOS topology also

allows for very low dropout.

The TPS737 uses an advanced BiCMOS process to

yield high precision while delivering very low dropout

voltages and low ground pin current. Devices that use

the latest manufacturing flow have an updated design

with new silicon on the latest TI process technology.

Current consumption, when not enabled, is less than

20nA and is designed for portable applications. This

device is protected by thermal shutdown and foldback

current limit.

For applications that require higher output voltage

accuracy, consider TI's TPS7A37 1% overall

accuracy, 1A low-dropout voltage regulator.