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M54562

8-UNIT500mASOURCETYPEDARLINGTONTRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M54562PandM54562FPareeight-circuitoutput-sourcingDarlingtontransistorarrays.ThecircuitsaremadeofPNPandNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES •Highbreakdownvoltage(

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M54562FP

8-UNIT500mADARLINGTONTRANSISTORARRAYWITHCLAMPDIODESOURCETYPE

DESCRIPTION M54562PandM54562FPareeight-circuitoutput-sourcingDarlingtontransistorarrays.ThecircuitsaremadeofPNPandNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES •Highbreakdownvoltage(

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M54562FP

8-UNIT500mASOURCETYPEDARLINGTONTRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M54562PandM54562FPareeight-circuitoutput-sourcingDarlingtontransistorarrays.ThecircuitsaremadeofPNPandNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES •Highbreakdownvoltage(

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M54562P

8-UNIT500mASOURCETYPEDARLINGTONTRANSISTORARRAYWITHCLAMPDIODE

DESCRIPTION M54562PandM54562FPareeight-circuitoutput-sourcingDarlingtontransistorarrays.ThecircuitsaremadeofPNPandNPNtransistors.Boththesemiconductorintegratedcircuitsperformhigh-currentdrivingwithextremelylowinputcurrentsupply. FEATURES •Highbreakdownvoltage(

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M54562WP

8-UNIT500mASOURCETYPEDARLINGTONTRANSISTORARRAYWITHCLAMPDIODE

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

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