TPS28225中文资料具有 4V UVLO、用于同步整流的 4A、27V 半桥栅极驱动器数据手册TI规格书

描述 Description

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions. The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

特性 Features

• Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
• Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
• Wide Power System Train Input Voltage: 3 V Up to 27 V
• Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
• Capable to Drive MOSFETs with ≥40-A Current per Phase
• High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
• Capable to Propagate