TPS25940ARVCR.A中文资料德州仪器数据手册PDF规格书

1 Features

1• 2.7 V – 18 V Operating Voltage, 20 V (Max)

• 42 mΩ R ON (Typical)

• 0.6 A to 5.3 A Adjustable Current Limit (±8%)

• IMON Current Indicator Output (±8%)

• 200 μA Operating I Q (Typical)

• 95 μA DevSleep Mode IQ (Typical)

• 15 μA Disabled IQ (Typical)

• ±2% Overvoltage, Undervoltage Threshold

• Reverse Current Blocking

• 1 μs Reverse Voltage Shutoff

• Programmable dVo/dt Control

• Power Good and Fault Outputs

• -40°C to 125°C Junction Temperature Range

• UL 2367 Recognized

– File No. 169910

– RILIM ≥ 20 kΩ (4.81 A max)

• UL60950 - Safe during Single Point Failure Test

– Open/Short ILIM detection

2 Applications

• PCIe/SATA/SAS HDD and SSD Drives

• Enterprise and Micro Servers

• Smart Load Switch

• Set-Top-Box (STB), DTVs and Game Consoles

• RAID Cards - Holdup Power Management

• Telecom Switches and Routers

• Adapter Powered Devices

3 Description

The TPS25940 eFuse Power Switch is a compact,

feature rich power management device with a full

suite of protection functions, including a low power

DevSleep™ mode that supports compliance with the

SATA™ Device Sleep standard. The wide operating

range allows control of many popular DC bus

voltages. Integrated back to back FETs provide

bidirectional current control making the device well

suited for systems with load side holdup energy that

must not drain back to a failed supply bus.

Load, source and device protection are provided with

many programmable features including overcurrent,

dVo/dt ramp and overvoltage, undervoltage

thresholds. For system status monitoring and

downstream load control, the device provides

PGOOD, FLT and precise current monitor output.

Precise programmable undervoltage, overvoltage thresholds and the low IQ DevSleep mode simplify

SSD power management design.

The TPS25940 monitors V(IN) and V(OUT) to provide

true reverse current blocking when V(IN) < (V(OUT) - 10

mV). This function supports swift changeover to a

boosted voltage energy storage element in systems

where backup voltage is greater than bus voltage.