TPS2521XX

TPS2521xx, 2.7 - 5.7 V, 4 A, 31-m廓 True Reverse Current Blocking eFuse with Input Reverse Polarity Protection

TPS2521XX

TPS2521xx, 2.7 - 5.7 V, 4 A, 31-m廓 True Reverse Current Blocking eFuse with Input Reverse Polarity Protection

TPS2521XXRPW

TPS2521xx, 2.7 - 5.7 V, 4 A, 31-m廓 True Reverse Current Blocking eFuse with Input Reverse Polarity Protection

TPS2521XXRPW

TPS2521xx, 2.7 - 5.7 V, 4 A, 31-m廓 True Reverse Current Blocking eFuse with Input Reverse Polarity Protection

TSL2521

HighlySensitiveAmbientLightSensorwithSelectiveFlickerDetectionandFastSamplingforBrightnessControlorAuxiliarytoCamera

Features •Configurable,highsensitivity •Programmablegainandintegrationtime •4096xdynamicrangebygainadjustmentonly •1mluxdetectableilluminance •TailoredALSresponse •UV/IRblockingfilterforClearchannel •ALSinterruptwiththresholds •Flicker-immuneALSsensingwit

TZ2521A

CrystalUnitSMD3.2x2.525.00MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TZ2521C

CrystalUnitSMD3.2x2.525.00MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforcustomerforuseinwirelesscommunications devices,espec

UPA2521

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2521isN-channelMOSFieldEffectTransistor designedforDC/DCconverterandpowermanagement applicationsofportableequipments. FEATURES •Lowon-stateresistance RDS(on)1=16.5mΩMAX.(VGS=10V,ID=8.0A) RDS(on)2=25mΩMAX.(VGS=4.5V,ID=4.0A) •Bui

VOS-E-2521

PositionSensors2-WIREPOSITIONTRANSMITTER

VOS-E-2521/C

PositionSensors2-WIREPOSITIONTRANSMITTER