TPS2330开发板套件编程器的评估演示板及套件规格书PDF中文资料

TPS2330属于开发板套件编程器的评估演示板及套件。由德州仪器制造生产的TPS2330评估和演示板及套件该系列产品提供了一种方便的方法，在经过验证的实施环境中评估某些重点器件的性能或特性。评估方法通常有完善的文档说明，并且视乎具体情况由评估软件提供支持。产品通常由印刷电路板组成，板上已装有重点器件以及必要或有用的支持元器件，另外也可能包括其他组件，例如电缆或电源。对于数量特别多或类别独特的器件类别(如 ADC、DAC 和开关模式电源)，评估平台可组合为一个单独的产品系列。

1FEATURES

• Single-Channel High-Side MOSFET Driver

• Input Voltage: 3 V to 13 V

• Output dV/dt Control Limits Inrush Current

• Circuit-Breaker With Programmable

Overcurrent Threshold and Transient Timer

• Power-Good Reporting With Transient Filter

• CMOS- and TTL-Compatible Enable Input

• Low 5-μA Standby Supply Current (Max)

• Available in 14-Pin SOIC and TSSOP Package

• –40°C to 85°C Ambient Temperature Range

• Electrostatic Discharge Protection

APPLICATIONS

• Hot-Swap/Plug/Dock Power Management

• Hot-Plug PCI, Device Bay

• Electronic Circuit Breaker

DESCRIPTION

The TPS2330 and TPS2331 are single-channel hot-swap controllers that use external N-channel MOSFETs as

high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP),

inrush-current control, output-power status reporting, and the ability to discriminate between load transients and

faults, are critical requirements for hot-swap applications.

The TPS2330/31 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the

device is off at start-up and confirm the status of the output voltage rails during operation. An internal charge

pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel

MOSFETs. The charge pump controls both the rise times and fall times (dV/dt) of the MOSFETs, reducing power

transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent

conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during

power-state transitions, to disregard transients for a programmable period.