VP2206

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

VP2206

P-ChannelEnhancement-ModeVerticalDMOSFET

VP2206

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertexVP2206isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

XF2206-HP

INDUCTOR

XF2206-HPM

TORODIALINDUCTOR

XF2206-VO

TORODIALINDUCTOR

XF2206-VP

VERTICALINDUCTOR

XF2206-VPM

POTTEDINDUCTOR

XOPA2206DGKR

OPAx206Input-Overvoltage-Protected,4-μV,0.08-μV/°C,Low-PowerSuperBeta,e-trim™OpAmps

1Features •Integratedinputovervoltageprotectionupto±40V beyondsupplies •e-trim™operationalamplifierperformance –Lowoffsetvoltage:25μV(max) –Lowoffsetvoltagedrift:±0.5μV/°C(max) •Superbetainputs –Inputbiascurrent:500pA(max) –Inputcurrentnoise:110fA/√

XOPA2206DGKR

OPAx206Input-Overvoltage-Protected,4-μV,0.08-μV/°C,Low-PowerSuperBeta,e-trim™OpAmps

1Features •Integratedinputovervoltageprotectionupto±40V beyondsupplies •e-trim™operationalamplifierperformance –Lowoffsetvoltage:25μV(max) –Lowoffsetvoltagedrift:±0.5μV/°C(max) •Superbetainputs –Inputbiascurrent:500pA(max) –Inputcurrentnoise:110fA/√