TPS2105DBVR集成电路（IC）的OR控制器理想二极管规格书PDF中文资料

TPS2105DBVR属于集成电路（IC）的OR控制器理想二极管。由德州仪器制造生产的TPS2105DBVROR 控制器，理想二极管理想二极管控制器也称为 OR-ing 控制器，可用于以仅允许单向电流的方式控制外部通道晶体管（通常为 FET），类似于整流二极管，但传导损耗低得多。在其他应用中，它们通常用于在为了冗余和增加电流输出能力而并行连接的电源中提供逆流保护。

features

Dual-Input, Single-Output MOSFET Switch

With No Reverse Current Flow (No Parasitic

Diodes)

IN1 . . . 250-mW, 500-mA N-Channel;

18-mA Supply Current

IN2 . . . 1.3-W, 100-mA P-Channel;

0.75-mA Supply Current (VAUX Mode)

Advanced Switch Control Logic

CMOS and TTL Compatible Enable Input

Controlled Rise, Fall, and Transition Times

2.7 V to 5.5 V Operating Range

SOT-23-5 and SOIC-8 Package

–40°C to 85°C Ambient Temperature Range

2-kV Human Body Model, 750-V Charged

Device Model, 200-V Machine-Model

ESD Protection

typical applications

Notebook and Desktop PCs

Cell phone, Palmtops, and PDAs

Battery Management

description

The TPS2104 and TPS2105 are dual-input, single-output power switches designed to provide uninterrupted

output voltage when transitioning between two independent power supplies. Both devices combine one

n-channel (250 mW) and one p-channel (1.3 W) MOSFET with a single output. The p-channel MOSFET (IN2)

is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET

(IN1) is used with a main power supply that delivers higher current required for normal operation. Low

on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation

and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to

0.75 mA to decrease the demand on the standby power supply. The MOSFETs in the TPS2104 and TPS2105

do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current

when the switch is off.