丝印：2022；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range . . . 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time . . . 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current . . . 10 μA ·

文件：859.75 Kbytes 页数：30 Pages

TI

德州仪器

POWER-DISTRIBUTION SWITCHES

文件：377.7 Kbytes 页数：23 Pages

TI

德州仪器

POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range . . . 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time . . . 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current . . . 10 μA ·

文件：859.75 Kbytes 页数：30 Pages

TI

德州仪器

100 V, precision, bidirectional current sense amplifier

Features • Wide common-mode voltage: -4 to 100 V • High common-mode rejection CMR: 100 dB min. • Offset voltage: ±150 µV max. • Offset drift: 0.5 µV/°C max. • Enhanced PWM rejection • 2.7 to 5.5 V supply voltage • Internal fixed gain – TSC2020: 20 V/V – TSC2021: 50 V/V – TSC2022: 100 V/V

文件：4.27825 Mbytes 页数：29 Pages

STMICROELECTRONICS

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