双路 P 沟道增强模式 MOSFET

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1120 is the i • Low rDS(on) . . . 0.18 at VGS = -10 V\n• Requires No External VCC\n• VGS(th) = -1.5 V Max\n• ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015\n LinBICMOS is a trademark of Texas Instruments Incorporated;

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德州仪器