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TPS1120DR

丝印:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件:301.03 Kbytes 页数:17 Pages

TI

德州仪器

TPS1120DR.A

丝印:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件:301.03 Kbytes 页数:17 Pages

TI

德州仪器

TPS1120DR.A

丝印:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件:301.03 Kbytes 页数:17 Pages

TI

德州仪器

TPS1120DR.B

丝印:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件:301.03 Kbytes 页数:17 Pages

TI

德州仪器

TPS1120DR.B

丝印:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件:301.03 Kbytes 页数:17 Pages

TI

德州仪器

TPS1120Y

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件:301.03 Kbytes 页数:17 Pages

TI

德州仪器

TPS12000QDGXRQ1

丝印:1200;Package:VSSOP;TPS1200-Q1 45V, Automotive Low IQ Smart High Side Driver With Short-Circuit Protection and Diagnostics

1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi

文件:1.79799 Mbytes 页数:38 Pages

TI

德州仪器

TPS1200-Q1

TPS1200-Q1 45V, Automotive Low IQ Smart High Side Driver With Short-Circuit Protection and Diagnostics

1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi

文件:1.79799 Mbytes 页数:38 Pages

TI

德州仪器

TPS1200-Q1

TPS1200-Q1 45-V, Automotive Low IQ Smart High Side Driver with Short-Circuit Protection and Diagnostics

1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi

文件:1.78516 Mbytes 页数:33 Pages

TI

德州仪器

TPS1200-Q1_V01

TPS1200-Q1 45V, Automotive Low IQ Smart High Side Driver With Short-Circuit Protection and Diagnostics

1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi

文件:1.79799 Mbytes 页数:38 Pages

TI

德州仪器

产品属性

  • 产品编号:

    TPS2372-4RGWT

  • 制造商:

    Texas Instruments

  • 类别:

    集成电路(IC) > 以太网供电(PoE)控制器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 类型:

    控制器(PD)

  • 内部开关:

  • 辅助作用:

  • 标准:

    802.3at(PoE+),802.3bt

  • 电压 - 供电:

    0V ~ 57V

  • 电流 - 供电:

    550µA

  • 工作温度:

    -40°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    20-VQFN 裸露焊盘

  • 供应商器件封装:

    20-VQFN(5x5)

  • 描述:

    IC POE CNTRL 1 CHANNEL 20VQFN

供应商型号品牌批号封装库存备注价格
TI/德州仪器
22+
VQFN-20
250
原装正品现货假一罚十
询价
TI(德州仪器)
24+
QFN-20-EP(5x5)
1083
特价优势库存质量保证稳定供货
询价
TI(德州仪器)
24+
QFN-20-EP(5x5)
5239
百分百原装正品,可原型号开票
询价
Texas Instruments
24+
20-VQFN(5x5)
53200
一级代理/放心采购
询价
TI/德州仪器
23+
20-VQFN
3454
原装正品代理渠道价格优势
询价
TI(德州仪器)
2447
VQFN-20
315000
250个/圆盘一级代理专营品牌!原装正品,优势现货,长
询价
TI
25+
DFN-20
3854
就找我吧!--邀您体验愉快问购元件!
询价
Texas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
TI(德州仪器)
2021+
VQFN-20
499
询价
TI
25+
VQFN (RGW)
6000
原厂原装,价格优势
询价
更多TPS供应商 更新时间2025-10-7 16:42:00