MOSFETs Silicon N-channel MOS

Applications • Lithium-Ion Secondary Batteries • Power Management Switches Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10

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TOSHIBA

东芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Lithium-Ion secondary batteries / Power management switches\nPolarity：N-ch\nGeneration：U-MOSⅧ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 43 A \nPower Dissipation PD 19 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

SOT23-6

3PEAK

思瑞浦

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DIP14

ALLEGRO/雅丽高

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原厂

ASI

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