TPM2025Q中文资料Automotive Dual-Channel Ultra-Highspeed GaN Predriver数据手册3PEAK规格书

描述 Description

The TPM2025 / TPM2025Q family are low-side dual- channel ultra-highspeed gate drivers for GaN and logic-level MOSFETs. It is optimized for high-speed applications such as Lidar and high-density power convertors with enhanced low propagation delay design. The TPM2025’s 2-mm×2-mm flip-chip QFN package minimizes parasitic inductance in the gate driver power loop and achieves state-of-the-art narrow pulse width as short as 0.69 ns. Channel independent transient suppressors ensure reliable operation with ultra-fast high-current output pulses.

特性 Features

• AEC-Q100 Grade-1 Qualified (TPM2025Q Only)

• Dual Independent Channels

• 5-V Single Supply with Optimized Output Damping for Gan Reliability

• 7-A Peak Source And 5-A Sink-Drive Current

• 0.69-ns Minimum Input Pulse Width (Typical)

• Low Propagation Delay (2-ns Typical)

• Optimized Pinout for nanosecond-pulse-width

• Fast Rise and Fall Times (0.45-ns and 0.45-ns Typical)

• <0.61-ns Typical Delay Matching Between Two Channels

• ESD Protection Exceeds JESD 22 – 2-kV HBM, 1-kV CDM

• Available in Flip-Chip QFN2X2-10 Package

应用 Application

• Laser Distance Measuring System
• Automotive Lidar
• Driver Monitoring System
• GaN DC/DC Conversion System