TPM2015Q中文资料思瑞浦数据手册PDF规格书

Features

• AEC-Q100 Grade-1 Qualified (TPM2015Q Only)

• 5-V Single Supply with Optimized Output Damping for

Gan Reliability

• 7-A Peak Source and 5-A Sink-Drive Current

• 0.69-ns Minimum Input Pulse Width (Typical)

• Low Propagation Delay (2-ns Typical)

• Optimized Pinout for Nanosecond-pulse-width

• Fast Rise and Fall Times (0.45-ns and 0.45-ns Typical)

• ESD Protection Exceeds JESD 22 – 6-kV HBM, 1.5-kV

CDM

• Available in Flip-Chip QFN2X2-10 Package

Applications

• Laser Distance Measuring System

• Automotive Lidar

• Driver Monitoring System

• GaN DC/DC Conversion System

Description

The TPM2015Q family of products are low-side singlechannel ultra-highspeed gate drivers for GaN and logiclevel MOSFETs. It is optimized for high-speed applications

such as Lidar and high-density power convertors with

enhanced low propagation delay design. The 2-mm×2-mm

flip-chip QFN package of the TPM2015 minimizes parasitic

inductance in the gate driver power loop and achieves

state-of-the-art narrow pulse width as short as 0.69 ns.

Transient suppressors ensure reliable operation with ultrafast high-current output pulses.