TPH8R808QM

丝印：TPH8R808QM；Package：SOP；MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.6nC(typ.) (3)Smalloutputcharge:Qoss=31nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=6.8mΩ(typ.)(VGS=10V

TPH8R808QM

Power MOSFET (N-ch single 60V

Application ScopeDC-DC Converters / High-Speed Switching / Switching Voltage Regulators\nPolarityN-ch\nGenerationU-MOSⅩ-H\nInternal ConnectionSingle\nRoHS Compatible Product(s) (#)Please contact us.\n

TPH8R80ANH

Power MOSFET (N-ch single 60V VDSS 150V); Drain current ID 59 A \nPower Dissipation PD 61 W \nDrain-Source voltage VDSS 100 V \nGate-Source voltage VGSS +/-20 V \n;

Application Scope：Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚\n

TPH8R80ANH

MOSFETs Silicon N-channel MOS (U-MOS-H)