首页 >TPH6R003NLLQ>规格书列表
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MOSFETsSiliconN-channelMOS Applications •SwitchingVoltageRegulators •DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=4.3nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=6.8mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5)Enhancementm | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS Applications •SwitchingVoltageRegulators •DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=4.3nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=6.8mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5)Enhancementm | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER |
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