丝印：TPH6R003NL；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • Switching Voltage Regulators • DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 4.3 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5) Enhancement m

文件：227.14 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：High efficiency DC/DC converters / Notebook PCs / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 57 A \nPower Dissipation PD 34 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

MOSFETs Silicon N-channel MOS

Applications • Switching Voltage Regulators • DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 4.3 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5) Enhancement m

文件：238.15 Kbytes 页数：9 Pages

TOSHIBA

东芝

N-Channel MOSFET uses advanced trench technology

文件：1.36671 Mbytes 页数：4 Pages

DOINGTER

杜因特