丝印：TPH5R906NH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • Switching Voltage Regulators • Motor Drivers • DC-DC Converters Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 18 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = 10 V) (5) Low

文件：230.84 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 71 A \nPower Dissipation PD 57 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

TOSHIBA/东芝
SOPAdvance

TOSHIBA/东芝

上传：深圳庞田科技有限公司

TOSHIBA/东芝
SOPAdvance

TOSHIBA/东芝

上传：深圳庞田科技有限公司

TI
A/N

TI

德州仪器

上传：深圳诚思涵科技有限公司