丝印：TPH4R606NH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • Switching Voltage Regulators • Motor Drivers • DC-DC Converters Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 19 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) (5) Low

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TOSHIBA

东芝

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚 Drain current ID 85 A \nPower Dissipation PD 63 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

SOPAdvance

TOSHIBA/东芝

上传：深圳庞田科技有限公司

SOPAdvance

TOSHIBA/东芝

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A/N

TI

德州仪器

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