600V Cascode GaN FET in TO-220 (source tab)

Transphorm

采用 TO-220 封装的 650V 150mΩ 氮化镓GaN FET

The TPH3206PSB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\r\n\r\n Transphorm GaN offers improved efficiency over silicon,through lower • 易于驱动 – 与标准栅极驱动器兼容\n• 低传导、低开关损耗\n• 低 Qrr (52nC) – 无需任何续流二极管\n• GSD 引脚布局可提升高速设计\n• 通过 JEDEC 认证的 氮化镓GaN技术\n• 符合限制有害物质指令 (RoHS) 规范要求且不含卤素\n• 实现更高效的拓扑 – 易于实施无桥图腾柱设计\n• 快速切换，提高效率\n• 提高功率密度\n• 系统尺寸减小、重量减轻\n• BOM 成本更低;

Transphorm

650V GaN FET in TO-220

文件：1.76283 Mbytes 页数：13 Pages

TRANSPHORM

Crystal Unit SMD 1.6x1.2 40MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Description and Applications: Surface mount 1.6mmx1.2mm crystal unit for use in wireless communications devices, especially for a n

文件：206.77 Kbytes 页数：8 Pages

TAI-SAW

嘉硕科技

Crystal Unit SMD 1.6x1.2 40.0MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Moisture Sensitivity Level (MSL) : Level-1 Description and Applications: Surface mount 1.6mmx1.2mm crystal unit for use in wireless

文件：215.73 Kbytes 页数：8 Pages

TAI-SAW

嘉硕科技

50dB AGC AMP VIDEO AMP

DESCRIPTION The µPC3206GR is Silicon monolithic IC designed for Digital DBS and Digital CATV receivers. This IC consists of a two stage gain control amplifier and a wideband linear video amplifier. This IC is packaged in 20-pin SSOP. Therefore, it can make RF block small. FEATURES • Bro

文件：270.28 Kbytes 页数：32 Pages

NEC

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